Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 79, Issue 17, 2001, Pages 2740-2742

  Ptak, A J ^a   Holbert, L J ^a   Ting, L ^a   Swartz, C H ^a   Moldovan, M ^a   Giles, N C ^a   Myers, T H ^a   Van Lierde, P ^b   Tian, C ^b   Hockett, R A ^b   Mitha, S ^b   Wickenden, A E ^c,d   Koleske, D D ^c   Henry, R L ^c  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b CHARLES EVANS AND ASSOCIATES   (United States)

^c Lab for Advanced Material Synthesis   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035934870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1403276     Document Type: Article

References (11)

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