Unusual properties of the fundamental band gap of InN

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 3967-3969

  Wu, J ^a,b   Walukiewicz, W ^b   Yu, K M ^b   Ager, J W ^b   Haller, E E ^b,c   Lu, Hai ^d   Schaff, William J ^d   Saito, Yoshiki ^e   Nanishi, Yasushi ^e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of California Berkeley   (United States)

^d School of Operations Research and Industrial Engineering   (United States)

^e RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; CHARACTERIZATION TECHNIQUES; FREE ELECTRON CONCENTRATION; FUNDAMENTAL BAND GAP; PEAK ENERGY; PHOTOLUMINESCENCE PEAK ENERGY; PHOTOMODULATED REFLECTANCE; SAPPHIRE SUBSTRATES;

ENERGY GAP; HYDROSTATIC PRESSURE; PHOTOLUMINESCENCE; SAPPHIRE; ZINC SULFIDE;

OPTICAL PROPERTIES;

EID: 79956030105     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1482786     Document Type: Article

References (18)

1. S. Nakamura and G. Fasol, Blue Laser Diode (Springer, Berlin, 1997).
2. V. A. Tygai, A. M. Evstigneev, A. N. Krasiko, A. F. Andreeva, and V. Ya. Malakhov, Sov. Phys. Semicond. 11, 1257 (1977). sos SPSEAX 0038-5700
3. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986). jap JAPIAU 0021-8979
4. Q. Guo and A. Yoshida, Jpn. J. Appl. Phys., Part 1 33, 2453 (1994). jjb JAPNDE 0021-4922
5. C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki, Appl. Phys. Lett. 73, 1994 (1998). apl APPLAB 0003-6951
6. T. Yodo, H. Yona, H. Ando, D. Nosei, and Y. Harada, Appl. Phys. Lett. 80, 968 (2002). apl APPLAB 0003-6951
7. D. C. Look, H. Lu, W. J. Schaff, J. Jasinski, and Z. Liliental Weber, Appl. Phys. Lett. 80, 258 (2002). apl APPLAB 0003-6951
8. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Cryst. Growth 227-228, 481 (2001). jcr JCRGAE 0022-0248
9. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002). psb PSSBBD 0370-1972
10. H. Lu, W. J. Schaff, J. Hwang, H. Wu, W. Yeo, A. Pharkya, and L. F. Eastman, Appl. Phys. Lett. 77, 2548 (2000). apl APPLAB 0003-6951
11. Y. Saito, N. Teraguchi, A. Suzuki, T. Araki and Y. Nanishi, Jpn. J. Appl. Phys., Part 2 40, L91 (2001). jjc JAPLD8 0021-4922
12. M. D. Sturge, Phys. Rev. 127, 768 (1962). phr PHRVAO 0031-899X
13. W. Shan, T. J. Schmidt, X. H. Yang, S. K. Hwang, J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 66, 985 (1995). apl APPLAB 0003-6951
14. W. Shan, J. J. Song, Z. C. Feng, M. Schurman, and R. A. Stall, Appl. Phys. Lett. 71, 2433 (1997). apl APPLAB 0003-6951
15. W. Shan, J. W. Ager III, K. M. Yu, W. Walukiewicz, E. E. Haller, M. C. Martin, W. R. McKinney, and W. Yang, J. Appl. Phys. 85, 8505 (1999). jap JAPIAU 0021-8979
16. D. J. Wolford and J. A. Bradley, Solid State Commun. 53, 1069 (1985). ssc SSCOA4 0038-1098
17. P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Lepkowski, N. E. Christansen, A. Svane, M. Hansen, S. P. DenBaars, D. Damilano, N. Grandjean, and S. P. Massies, Phys. Rev. B 64, 115319 (2001). prb PRBMDO 0163-1829
18. M. L. Cohen and D. J. Chadi, in Semiconductor Handbook, edited by M. Balkanski (North-Holland, Amsterdam, 1980), Vol. 2, Chap. 4b.