Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5141-5143

  Suda, Jun ^a   Miura, Kouhei ^a   Honaga, Misako ^a   Nishi, Yusuke ^a   Onojima, Norio ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ETCHING; HYDROCHLORIC ACID; MOLECULAR BEAM EPITAXY; SILICON CARBIDE;

X-RAY ROCKING CURVES (XRC);

GALLIUM NITRIDE;

EID: 0346665822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1533855     Document Type: Article

References (10)

1. L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, IEEE Trans. Electron Devices 48, 479 (2001)
2. M. Micovic, N. X. Nguyen, P. Janke, W.-S. Wong, P. Hashimoto, L.-M. McCray, and C. Nguyen, Electron. Lett. 36, 358 (2000)
3. J. Webb, H. Tang, J. A. Bardwell, S. Rolfe, Y. Liu, J. Lapointe, P. Marshall, and T. W. MacElwee, Phys. Status Solidi A 188, 271 (2001)
4. N. Onojima, J. Suda, and H. Matsunami, Appl. Phys. Lett. 80, 76 (2002)
5. N. Onojima, J. Suda, and H. Matsunami, J. Cryst. Growth 237-239, 1012 (2002)
6. S. Nakamura, T. Kimoto, H. Matsunami, S. Tanaka, N. Teraguchi, and A. Suzuki, Appl. Phys. Lett. 76, 3412 (2000)
7. R. Kaplan, Surf. Sci. 215, 111 (1989)
8. O. Brandt, R. Muralidharan, P. Waltereit, A. Thamm, A. Trampert, H. von Kiedrowski, and K. H. Ploog, Appl. Phys. Lett. 75, 4019 (1999)
9. M. H. Xie, L. X. Zheng, S. H. Cheung, Y. F. Ng, H. Wu, S. Y. Tong, and N. Otani, Appl. Phys. Lett. 77, 1105 (2000)
10. B. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 85, 6470 (1999)