Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

Applied Physics Letters

Volumn 71, Issue 18, 1997, Pages 2635-2637

  Seelmann Eggebert, M ^a   Weyher, J L ^a   Obloh, H ^a   Zimmermann, H ^a   Rar, A ^a   Porowski, S ^a,b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001716964     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120163     Document Type: Article

References (18)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Ymada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Appl. Phys. Lett. 68, 2105 (1996).
2. S. Keller, B. P. Kemmer, Y.-F. Wu, B. Heyring, D. Kapolneck, J. S. Speck, U. K. Mishra, and S. P. Denbaars, Appl. Phys. Lett. 68, 1525 (1996).
3. M. Seelmann-Eggebert, H. Zimmermann, H. Obloh, R. Niebuhr, and B. Wachtendorf, Mater. Res. Symp. Proc. 468, 193 (1997).
4. J. L. Rouviere, M. Arlery, R. Niebuhr, K. H. Bachem, and O. Briot, MRS Internet J. Nitride Semicond. Res. 1, 33 (1996).
5. F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69 (1996).
6. Final Report of the Brite-Euram II EC-Project BRE2-CT93-0526 (1996).
7. A close relation between lhe polarity of the (00.1) crystal face and a surface terminating atomic layer is established if the ideal wurtzite lattice is truncated by a plane cutting only a single bond per atom. In this sense, we describe the polarity of a crystal face in terms of a surface termination.
8. B. Daudin, J. L. Rouvière, and M. Arlery, Appl. Phys. Lett. 69, 2480 (1996).
9. J. L. Weyher, S. Müller, I. Grzegory, and S. Porowski, J. Cryst. Growth 182 (1997).
10. J. L. Weyher, in Handbook on Semiconductors, edited by S. Mahajan (Elsevier, Amsterdam, 1994), Vol. 3, p. 1005.
11. M. Seelmann-Eggebert and H. J. Richter, J. Vac. Sci. Technol. B 9, 1861 (1991).
12. Z. Liliental-Weber, C. Kisielowski, S. Ruvimov, Y. Chen, J. Washburn, I. Grzegory, M. Bockowski, J. Jun, and S. Porowski, J. Electron. Mater. 25, 1545 (1996). (These authors use a definition for the polar orientation which differs from the conventional one used here).
13. G. Novak, S. Krukowski, J. Grzegory, S. Porowski, J. M. Baranowski, K. Pakula, and J. Zak, MRS Internet J. Nitride Semicond. Res. 1, 5 (1996).
14. J. L. Rouvière, J. L. Weyher, M. Seelmann-Eggebert, and S. Porowski, J. Cryst. Growth (submitted for publication).
15. M. Seelmann-Eggebert, Surf. Sci. 377-379, 1094 (1997); Phys. Rev. B 55, 15 842 (1997).
16. M. Seelmann-Eggebert, Surf. Sci. 377-379, 1094 (1997); Phys. Rev. B 55, 15 842 (1997).
17. P. Kung, C. J. Sun, A. Saxler, H. Ohsato, and M. Razeghi, J. Appl. Phys. 75, 4515 (1994).
18. M. Gautier, J. P. Durand, L. Pham Van, and M. J. Guittet, Surf. Sci. 250, 71 (1991).