Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 494-498

  Higashiwaki, Masataka ^a   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B2. Semiconducting indium compounds

Indexed keywords

FILM GROWTH; HETEROJUNCTIONS; LIGHT ABSORPTION; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY (PAMBE);

MOLECULAR BEAM EPITAXY;

EID: 0037381899     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02362-X     Document Type: Conference Paper

References (12)

1. O'Leary S.K., Foutz B.E., Shur M.S., Bhapkar U.V., Eastman L.F. J. Appl. Phys. 83:1998;826.
2. Foutz B.E., O'Leary S.K., Shur M.S., Eastman L.F. J. Appl. Phys. 85:1999;7727.
3. Lu H., Schaff W.J., Hwang J., Wu H., Koley G., Eastman L.F. Appl. Phys. Lett. 79:2001;1489.
4. Look D.C., Lu H., Schaff W.J., Jasinski J., Liliental-Weber Z. Appl. Phys. Lett. 80:2002;258.
5. Higashiwaki M., Matsui T. Jpn. J. Appl. Phys. 41:2002;L540.
6. Higashiwaki M., Matsui T. Phys. Stat. Sol. C 0:2002;360.
7. M. Higashiwaki, T. Matsui, J. Crystal Growth, in preparation.
8. Davydov V.Yu., Klochikhin A.A., Seisyan R.P., Emtsev V.V., Ivanov S.V., Bechstedt F., Furthmüller J., Harima H., Mudryi A.V., Aderhold J., Semchinova O., Graul J. Phys. Stat. Sol. B. 229:2002;R1.
9. Wu J., Walukiewicz W., Yu K.M., Ager J.W. III, Haller E.E., Lu H., Schaff W.J., Saito Y., Nanishi Y. Appl. Phys. Lett. 80:2002;3967.
10. Matsuoka T., Okamoto H., Nakao M., Harima H., Kurimoto E. Appl. Phys. Lett. 81:2002;1246.
11. Tansley T.L., Foley C.P. J. Appl. Phys. 59:1986;3241.
12. Yodo T., Yona H., Ando H., Nosei D., Harada Y. Appl. Phys. Lett. 80:2002;968.