Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 162-166

  Higashiwaki, Masataka ^a   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B2. Semiconducting indium compounds

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRON DIFFRACTION; HEAT CONDUCTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON; X RAY DIFFRACTION;

BAND-GAP ENERGY; HIGH ELECTRON SATURATION; RENORMALIZATION; SEMICONDUCTING MATERIALS;

INDIUM;

EID: 3342931415     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.045     Document Type: Conference Paper

References (14)

1. Lu H., Schaff W.J., Hwang J., Wu H., Koley G., Eastman L.F. Appl. Phys. Lett. 79:2001;1489.
2. Higashiwaki M., Matsui T. Jpn. J. Appl. Phys. 41:2002;L540.
3. Xu K., Yoshikawa A. Appl. Phys. Lett. 83:2003;251.
4. Inushima T., Mamutin V.V., Vekshin V.A., Ivanov S.V., Sakon T., Motokawa M., Ohoya S. J. Crystal Growth. 227:2001;481.
5. Davydov V.Y., Klochikhin A.A., Emtsev V.V., Kurdyukov D.A., Ivanov S.V., Vekshin V.A., Bechstedt F., Furthmüller J., Aderhold J., Graul J., Mudryi A.V., Harima H., Yamamoto A., Haller E.E. Phys. Stat. Sol. (B). 234:2002;787.
6. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Lu H., Schaff W.J., Saito Y., Nanishi Y. Appl. Phys. Lett. 80:2002;3967.
7. Matsuoka T., Okamoto H., Nakao M., Harima H., Kurimoto E. Appl. Phys. Lett. 81:2002;1246.
8. Tansley T.L., Foley C.P. J. Appl. Phys. 59:1986;3241.
9. Higashiwaki M., Matsui T. J. Crystal Growth. 251:2003;494.
10. Bellotti E., Doshi B.K., Brennan K.F., Albrecht J.D., Ruden P.P. J. Appl. Phys. 85:1999;916.
11. Foutz B.E., O'Leary S.K., Shur M.S., Eastman L.F. J. Appl. Phys. 85:1999;7727.
12. Higashiwaki M., Matsui T. J. Crystal Growth. 252:2003;128.
13. Wu J., Waluliewicz W., Shan W., Yu K.M., Ager III J.W., Haller E.E., Lu H., Schaff W.J. Phys. Rev. B. 66:2002;201403.
14. Inushima T., Higashiwaki M., Matsui T. Phys. Rev. B. 68:2003;235204.