Relation between interdiffusion and polarity for MBE growth of GaN epilayers on ZnO substrates

Current Applied Physics

Volumn 4, Issue 6, 2004, Pages 643-646

  Suzuki, Takuma ^a   Harada, Chihiro ^a   Goto, Hiroki ^a   Minegishi, Tsutomu ^a   Setiawan, Agus ^a   Ko, H J ^c   Cho, Meoung Whan ^b   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

GaN; Hetero interface; Molecular beam epitaxy; Polarity; ZnO

Indexed keywords

EID: 5144220251     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2004.01.039     Document Type: Article

References (6)

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