Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

Applied Physics Letters

Volumn 81, Issue 3, 2002, Pages 469-471

  Craven, M D ^a   Lim, S H ^a   Wu, F ^a   Speck, J S ^a   Denbaars, S P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; CONVERGENT-BEAM ELECTRON DIFFRACTION; DEVICE-QUALITY; GROWTH SURFACES; HIGH TEMPERATURE; IN-PLANE ORIENTATION; LOW TEMPERATURE NUCLEATION; NON-POLAR; SAPPHIRE SUBSTRATES; STRUCTURAL CHARACTERISTICS; STRUCTURAL CHARACTERIZATION; SUBMICRON; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPE;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; STACKING FAULTS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

GALLIUM NITRIDE;

EID: 79955984192     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1493220     Document Type: Article

References (18)

1. I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, and U. K. Mishra, J. Appl. Phys. 86, 4520 (1999). jap JAPIAU 0021-8979
2. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999). jap JAPIAU 0021-8979
3. I. Jin Seo, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998). prb PRBMDO 0163-1829
4. R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, and M. Godlewski, Appl. Phys. Lett. 74, 3827 (1999). apl APPLAB 0003-6951
5. P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, and P. Bigenwald, Phys. Rev. B 59, 15363 (1999). prb PRBMDO 0163-1829
6. P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allegre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 1252 (2001). apl APPLAB 0003-6951
7. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 73, 1691 (1998). apl APPLAB 0003-6951
8. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000). nat NATUAS 0028-0836
9. T. Sasaki and S. Zembutsu, J. Appl. Phys. 61, 2533 (1987). jap JAPIAU 0021-8979
10. C. J. Sun and M. Razeghi, Appl. Phys. Lett. 63, 973 (1993). apl APPLAB 0003-6951
11. T. Metzger, H. Angerer, O. Ambacher, M. Stutzmann, and E. Born, Phys. Status Solidi B 193, 391 (1996). psb PSSBBD 0370-1972
12. T. Lei, K. F. Ludwig, Jr., and T. D. Moustakas, J. Appl. Phys. 74, 4430 (1993). jap JAPIAU 0021-8979
13. C. R. Eddy, Jr., T. D. Moustakas, and J. Scanlon, J. Appl. Phys. 73, 448 (1993). jap JAPIAU 0021-8979
14. T. D. Moustakas, T. Lei, and R. J. Molnar, Physica B 185, 36 (1993). phb PHYBE3 0921-4526
15. K. Iwata, H. Asahi, K. Asami, R. Kuroiwa, and S. Gonda, Jpn. J. Appl. Phys., Part 2 36, L661 (1997). jjc JAPLD8 0021-4922
16. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986). apl APPLAB 0003-6951
17. K. Dovidenko, S. Oktyabrsky, and J. Narayan, J. Appl. Phys. 82, 4296 (1997). jap JAPIAU 0021-8979
18. B. Heying, X. H. Wu, A. S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996). apl APPLAB 0003-6951