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Volumn 73, Issue 18, 1998, Pages 2621-2623

Quantum tailoring of optical transitions in InxGa1-xAs/AlAs strained quantum wells

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[No Author keywords available]

Indexed keywords


EID: 0000479727     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122525     Document Type: Article
Times cited : (21)

References (18)
  • 12
    • 21944438510 scopus 로고    scopus 로고
    • b≈2meV. It is conceivable that such an energy could be related to electrons weakly bound to Si donor levels near the conduction band
    • b≈2meV. It is conceivable that such an energy could be related to electrons weakly bound to Si donor levels near the conduction band.
  • 13
    • 21944444022 scopus 로고    scopus 로고
    • We remark that the comparison with the T=0K tight-binding calculation is justified by the negligible temperature dependence of the instersubband absorption energy
    • We remark that the comparison with the T=0K tight-binding calculation is justified by the negligible temperature dependence of the instersubband absorption energy.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.