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Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 105-108

Characterization of Ca and C implanted GaN

(5) Mensching, B a Liu, C c Rauschenbach, B a Kornitzer, K b Ritter, W b

a UNIVERSITY OF AUGSBURG (Germany)

b UNIVERSITY OF ULM (Germany)

c NONE

Author keywords

Annealing; Doping; GaN; Ion implantation; Simulation

Indexed keywords

ANNEALING; ARGON; CALCIUM; CARBON; CARRIER CONCENTRATION; EMISSION SPECTROSCOPY; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0000030640 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00144-X Document Type: Article

Times cited : (24)

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