Temperature dependence of the fundamental band gap of InN

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4457-4460

  Wu, J ^a   Walukiewicz, W ^a   Shan, W ^a   Yu, K M ^a   Ager III, J W ^a   Li, S X ^a,b   Haller, E E ^a,b   Lu, Hai ^c   Schaff, William J ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California Berkeley   (United States)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

BAND GAP ENERGY;

INDIUM COMPOUNDS;

EID: 0142120866     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1605815     Document Type: Article

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