Study on the initial stages of heteroepitaxial growth of hexagonal GaN on sapphire by plasma assisted MBE

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 244-249

  Balakrishnan, K ^a   Okumura, H ^a   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Growth initiation; Hexagonal GaN; MBE; Nitrogen flux modulation; TEM; XRD FWHM

Indexed keywords

MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NITROGEN FLUX MODULATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094197     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00238-3     Document Type: Article

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