Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 467-469

  Hamdani, F ^a   Botchkarev, A ^a   Kim, W ^a   Morkoc H ^a,e   Yeadon, M ^a   Gibson, J M ^a   Tsen, S C Y ^b   Smith, David J ^b   Reynolds, D C ^c   Look, D C ^c   Evans, K ^d   Litton, C W ^d   Mitchel, W C ^d   Hemenger, P ^d  

^a United States of America   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e Wright Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8644275535     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118183     Document Type: Article

References (23)

1. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995); S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, ibid. 67, 1868 (1995).
3. S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995); S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, ibid. 67, 1868 (1995).
4. S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Appl. Phys. Lett. 68, 2105 (1996).
5. O Aktas, W. Kim, Z. Fan, A. Bothkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, and H. Morkoç, Electron. Lett. 31, 1389 (1995).
6. W. Kim, Ö Aktas, A. Botchkarev, A. Salvador, S. N. Mohammad, and H. Morkoç, J. Appl. Phys. 79, 7657 (1996).
7. B. N. Sverdlov, G. A. Martin, H. Morkoç, and D. J. Smith, Appl. Phys. Lett. 67, 2063 (1995).
8. A. Kuramata, K. Hirino, K. Domen, K. Shinohara, and T. Tanahashi, Appl. Phys. Lett. 67, 2521 (1995).
9. A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu, and I. Akasaki, J. Cryst. Growth 128, 391 (1993).
10. S. Fujieda and Y. Matsumoto, Jpn. J. Appl. Phys. 30, L 1665 (1991).
11. T. Matsuoka, N. Yoshimoto, T. Sasaki, and A. Katsui, J. Electron. Mater. 21, 157 (1992).
12. Z. Sitar, M. J. Paisley, B. Yan, and R. F. Davis, Mater. Res. Soc. Symp. Proc. 162, 537 (1990); P. J. Born and D. S. Robertson, J. Mater. Sci. 15, 3003 (1980).
13. Z. Sitar, M. J. Paisley, B. Yan, and R. F. Davis, Mater. Res. Soc. Symp. Proc. 162, 537 (1990); P. J. Born and D. S. Robertson, J. Mater. Sci. 15, 3003 (1980).
14. J. Singh, Physics of Semiconductors and Their Heterostructures (McGraw-Hill, New York, 1993), Chap. 18, p. 714.
15. T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki, J. Cryst. Growth 128, 384 (1993).
16. M. A. L. Johnson, S. Fujita, W. H. Rowland, W. C. Hughes, J. W. Cook, and J. F. Schetzina, J. Electron. Mater. 25, 855 (1996).
17. J. E. Northrup, J. Neugebauer, and L. T. Romano, Phys. Rev. Lett. 77, 103 (1996).
18. P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernholc, J. C. Chevrin, A. Polain, and T. D. Moustakas, Phys. Rev. Lett. 75, 296 (1995).
19. J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996).
20. B. Gil, O. Briot, and R. L. Aulombard, Phys. Rev. B 52, R17 028 (1995); B. Gil, F. Hamdani, and H. Morkoç, ibid. 54, 7678 (1996).
21. B. Gil, O. Briot, and R. L. Aulombard, Phys. Rev. B 52, R17 028 (1995); B. Gil, F. Hamdani, and H. Morkoç, ibid. 54, 7678 (1996).
22. Landolt-Börnstein (Springer-Verlag, Berlin, 1982), Vol. 17.
23. M. Stoehr, F. Hamdani, J. P. Lascaray, and M. Maurin, Phys. Rev. B 44, 8912 (1991).