The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 23-30

  Sanchez Garcia, M A ^a   Calleja, E ^a   Monroy, E ^a   Sanchez, F J ^a   Calle, F ^a   Munoz E ^a   Beresford, R ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; FILM GROWTH; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; STOICHIOMETRY; SUBSTRATES;

SEMICONDUCTING ALUMINUM NITRIDE; SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031700776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00386-2     Document Type: Article

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