Layer-by-layer growth of AlN and GaN by molecular beam epitaxy

Journal of Crystal Growth

Volumn 182, Issue 1-2, 1997, Pages 1-5

  Daudin, B ^a   Widmann, F ^a  

^a CEA GRENOBLE   (France)

Author keywords

Growth kinetics; MBE; Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL GROWTH; GALLIUM COMPOUNDS; HIGH ENERGY ELECTRON DIFFRACTION; NITRIDES;

ALUMINUM NITRIDE; GALLIUM NITRIDE;

MOLECULAR BEAM EPITAXY;

EID: 0031331595     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00339-4     Document Type: Article

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