Control of GaN surface morphologies grown on 6H-SiC (0 0 0 1) using plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 244, Issue 1, 2002, Pages 33-38

  Jeganathan, K ^a   Shimuzu, M ^a   Ide, T ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Desorption; A3. Molecular beam epitaxy; B1. nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SURFACE ROUGHNESS;

SURFACE MIGRATION;

MOLECULAR BEAM EPITAXY;

EID: 0036723334     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01588-9     Document Type: Article

References (14)