Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by ECR-MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 431-436

  Yodo, T ^a   Ando, H ^a   Tsuchiya, H ^a   Nosei, D ^a   Shimeno, M ^a   Harada, Y ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Crystal structure; A1. Growth models; A1. Nucleation; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

HETEROEPITAXIAL LAYERS; SUBSTRATE NITRIDATION;

SEMICONDUCTING FILMS;

EID: 0035398273     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00738-2     Document Type: Conference Paper

References (13)