Control of the polarity of GaN films using an Mg adsorption layer

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 460-464

  Grandjean, N ^a   Dussaigne, A ^a   Pezzagna, S ^a   Vennegues P ^a  

^a CRHEA CNRS   (France)

Author keywords

A1. Interfaces; A1. Reflection high energy electron diffractions; A3. Molecular beam epitaxy; B1. Gallium nitride

Indexed keywords

ADSORPTION; GALLIUM NITRIDE; INTERFACES (MATERIALS); MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED);

CRYSTAL GROWTH;

EID: 0037380617     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02361-8     Document Type: Article

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