Growth of cubic GaN on Si(001) by plasma-assisted MBE

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 1-6

  Yang, B ^a   Brandt, O ^a   Trampert, A ^a   Jenichen, B ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Coincidence lattice; Cubic GaN; Epitaxy

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL LATTICES; FILM GROWTH; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NUCLEATION; PHASE TRANSITIONS; PLASMA APPLICATIONS; SILICON; TEXTURES;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

NITRIDES;

EID: 0031700854     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00463-7     Document Type: Article

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