Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2564-2569

  Kim, D J ^a   Ryu, D Y ^a   Bojarczuk, N A ^b   Karasinski, J ^b   Guha, S ^b   Lee, S H ^c   Lee, J H ^c  

^a Chungnam National University   (South Korea)

^b IBM RESEARCH   (United States)

^c Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BEAM EPITAXY; ELECTRIC ADMITTANCE; GALLIUM NITRIDE; HALL EFFECT; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY;

ACCEPTOR CONCENTRATIONS; ACCEPTOR ENERGY; ADMITTANCE SPECTROSCOPIES; COMBINED EFFECT; HALL EFFECT MEASUREMENT; NITROGEN SOURCES; SIMULATION PROCESS; THERMAL ACTIVATION ENERGIES;

ACTIVATION ENERGY;

EID: 0000119818     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1286925     Document Type: Article

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