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Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 59-65

High temperature growth of InN on GaP(111)B substrate using a new two-step growth method

(4) Bhuiyan, Ashraful G a Yamamoto, A a Hashimoto, A a Ito, Y b

a UNIVERSITY OF FUKUI (Japan)

b WAKASA WAN ENERGY RESEARCH CENTER (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTALLINE MATERIALS; HIGH TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES;

NITRIDATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036499036 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02155-8 Document Type: Article

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.