Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

Applied Physics Letters

Volumn 72, Issue 3, 1998, Pages 350-352

  Mesrine, M ^a   Grandjean, N ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001422565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120733     Document Type: Article

References (13)

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