Comparison of N-face and Ga-face AIGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 4962-4968

  Dmitrov, R ^a   Mltchell, A ^b   Wlttmer, L ^a   Ambacher, O ^b   Stutzmann, M ^a   Hllsenbeck, J ^b   Rieger, W ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

2DEG; Algan; Gan; Heterostructure; Polarization; Transistor

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; SOURCE-DRAIN CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033327787     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4962     Document Type: Article

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