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Applied Physics Letters

Volumn 72, Issue 4, 1998, Pages 415-417

Ultraviolet and violet GaN light emitting diodes on silicon

(2) Guha, Supratik a Bojarczuk, Nestor A a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRONS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DOUBLE HETEROSTRUCTURE; EPITAXIAL FILM;

LIGHT EMITTING DIODES;

EID: 0031696454 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120775 Document Type: Article

Times cited : (329)

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