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Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4369-4371

Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (101̄2) sapphire substrates

(1) Ng, H M a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD VALUES; NON-POLAR GAN; ORIENTATION RELATIONSHIP; PHOTOLUMINESCENCE INTENSITIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POTENTIAL PROFILES; QUANTUM CONFINED STARK EFFECT; RED SHIFT; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SAPPHIRE SUBSTRATES; TRANSITION ENERGY; WELL WIDTH;

ALUMINUM; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79957932778 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1484543 Document Type: Article

Times cited : (271)

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