Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates

Applied Physics Letters

Volumn 74, Issue 15, 1999, Pages 2161-2163

  Birkhahn, R ^a   Garter, M ^a   Steckl, A J ^a  

^a 705 Engineering Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PRASEODYMIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON WAFERS;

FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE; STARK SPLITTING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032607521     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123787     Document Type: Article

References (25)

1. R. F. Davis, IEEE 79, 702 (1991).
2. I. Akasaki and H. Amano, J. Electrochem. Soc. 141, 2266 (1994).
3. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
4. S. N. Mohammad, A. A. Salvador, and H. Morkoç, Proc. IEEE 83, 1306 (1995).
5. M. Meyer, Compd. Semicond., Special Issue 49 (1997).
6. G. Härkönen, M. Leppänen, E. Soininen, R. Törnqvist, and J. Viljanen, J. Alloys Compd. 225, 552 (1995).
7. R. S. Smith, H. D. Muller, H. Ennen, P. Wennekers, and M. Maier, Appl. Phys. Lett. 50, 49 (1987).
8. T. Lei, M. Fanciulli, R. J. Molnar, T. D. Moustakas, R. J. Graham, and J. Scanlon, Appl. Phys. Lett. 59, 944 (1991).
9. R. P. Vaudo, I. D. Goepfert, T. D. Moustakas, D. M. Beyea, T. J. Frey, and K. Meehan, Appl. Phys. Lett. 79, 2779 (1996).
10. J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hömmerich, X. Wu, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, J. Cryst. Growth 175/ 176, 84 (1997).
11. A. J. Steckl and R. Birkhahn, Appl. Phys. Lett. 73, 1700 (1998).
12. R. Birkhahn and A. J. Steckl, Appl. Phys. Lett. 73, 2143 (1998).
13. K. A. Gschneidner and L. Eyring, Handbook on the Physics and Chemistry of Rare Earths (North-Holland, New York, 1988).
14. J. D. Kingsley and M. Aven, Phys. Rev. 155, 235 (1967).
15. M. R. Brown, A. F. J. Cox, W. A. Shand, and J. M. Williams, J. Phys. C 4, 1049 (1971).
16. H. Kobayashi, S. Tanaka, and H. Sasakura, Jpn. J. Appl. Phys. 12, 1637 (1973).
17. I. Szczurek, H. J. Lozykowski, and T. Szczurek, J. Lumin. 23, 315 (1981).
18. L. E. Erickson, U. Akano, I. Mitchell, N. Rowell, and A. Wang, J. Lumin. 60-61, 8 (1994).
19. L. E. Erickson, U. Akano, I. Mitchell, N. Rowell, and A. Wang, J. Appl. Phys. 74, 2347 (1993).
20. P. L. Thee, Y. K. Yeo, R. L. Hengehold, and G. S. Pomrenke, J. Appl. Phys. 78, 4651 (1995).
21. N. A. Rzakuliev, V. M. Konnov, V. N. Yakimkin, V. V. Ushakov, and A. A. Gippius, Czech. J. Phys., Sect. B 38, 1288 (1988).
22. V. A. Kasatkin, F. P. Kesamanly, and B. E. Samorukov, Sov. Phys. Semicond. 15, 352 (1981).
23. V. A. Kasatkin, Sov. Phys. Semicond. 19, 1174 (1985).
24. T. Yokokawa, H. Inokuma, Y. Ohki, H. Nishikawa, and Y. Hama, J. Appl. Phys. 77, 4013 (1995).
25. G. H. Dieke, in Spectra and Energy Levels of Rare Earth Ions in Crystals, edited by H. M. Crosswhite and H. Crosswhite (Wiley, New York, 1968).