The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 139-149

  Losurdo, Maria ^a   Giuva, Danilo ^a   Bruno, Giovanni ^a   Huang, Sa ^b   Kim, Tong Ho ^c   Brown, April S ^c  

^a CNR   (Italy)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Duke University   (United States)

Author keywords

A1. Surface processes; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; ETCHING; GALLIUM NITRIDE; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; VAPORIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

LATTICE MISMATCH; SURFACE PROCESSES;

LITHIUM COMPOUNDS;

EID: 1342306672     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.018     Document Type: Article

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