Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 222-227

  Schurman, Matthew J ^a   Slagaj, Tom ^a   Tran, Chuong ^a   Karlicek Jr , Robert ^a   Ferguson, Ian ^a   Stall, Rick ^a   Thompson, Alan ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

III Nitrides; Metal organic chemical vapor deposition; Multi wafer reactor

Indexed keywords

COST EFFECTIVENESS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HETEROJUNCTIONS; INDIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; MULTIWAFER REACTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0006459679     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01872-7     Document Type: Article

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