SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 12, Issue 21, 2000, Pages 1571-1580

GaN electronics

(2) Pearton, Stephen J a Ren, Fan a

a University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC RECTIFIERS; ELECTROMAGNETIC WAVE POLARIZATION; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PIEZOELECTRICITY; POWER ELECTRONICS;

GALLIUM NITRIDE; HETEROINTERFACES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034318865 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/1521-4095(200011)12:21<1571::AID-ADMA1571>3.0.CO;2-T Document Type: Article

Times cited : (227)

References (97)

1
- 0033738001
- B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, L. F. Eastman, IEEE Electron Device Lett. 2000, 21, 268.
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 268
- Green, B.M.¹ Chu, K.K.² Chumbes, E.M.³ Smart, J.A.⁴ Shealy, J.R.⁵ Eastman, L.F.⁶

2
- 25344445407
- December
- Y. F. Wu, S. Keller, B. P. Keller, S. P. DenBaars, U. K. Mishra, Tech. Dig.-Int. Electron Devices Meet. 1999, December, 925.
- (1999) Tech. Dig.-Int. Electron Devices Meet. , pp. 925
- Wu, Y.F.¹ Keller, S.² Keller, B.P.³ DenBaars, S.P.⁴ Mishra, U.K.⁵

3
- 0342576099
- Electrochemical Society, Pennington, NJ
- K. K. Chu, J. A. Swart, J. R. Shealy, L. F. Eastman, in Proc. State of the Art Program in Compound Semiconductors, Vol. 98-23, Electrochemical Society, Pennington, NJ 1998, p. 201.
- (1998) Proc. State of the Art Program in Compound Semiconductors , vol.98 , Issue.23 , pp. 201
- Chu, K.K.¹ Swart, J.A.² Shealy, J.R.³ Eastman, L.F.⁴

4
- 0033164972
- R. Li, S. J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, J. M. Redwing, IEEE Electron Device Lett. 1999, 20, 323.
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 323
- Li, R.¹ Cai, S.J.² Wong, L.³ Chen, Y.⁴ Wang, K.L.⁵ Smith, R.P.⁶ Martin, S.C.⁷ Boutros, K.S.⁸ Redwing, J.M.⁹

5
- 0032668826
- S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, T. J. Jenkins, IEEE Electron Device Lett. 1999, 20, 161.
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 161
- Sheppard, S.T.¹ Doverspike, K.² Pribble, W.L.³ Allen, S.T.⁴ Palmour, J.W.⁵ Kehias, L.T.⁶ Jenkins, T.J.⁷

6
- 0032121634
- D. V. Kuksenkov, H. Temkin, R. Gaska, J. W. Yang, IEEE Electron Device Lett. 1998, 19, 222.
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 222
- Kuksenkov, D.V.¹ Temkin, H.² Gaska, R.³ Yang, J.W.⁴

7
- 0342576098
- VA, June 22-24, paper V.B.-5
- S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, presented at 56th Device Research Conference, Charlottesville, VA, June 22-24, 1998, paper V.B.-5.
- (1998) 56th Device Research Conference, Charlottesville
- Sheppard, S.T.¹ Doverspike, K.² Pribble, W.L.³ Allen, S.T.⁴ Palmour, J.W.⁵

8
- 0032098587
- G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, B. T. McDermott, IEEE Electron Device Lett. 1998, 19, 198.
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 198
- Sullivan, G.J.¹ Chen, M.Y.² Higgins, J.A.³ Yang, J.W.⁴ Chen, Q.⁵ Pierson, R.L.⁶ McDermott, B.T.⁷

9
- 0032047780
- G. J. Sullivan, J. A. Higgins, M. Y. Chen, J. W. Yang, Q. Chen, R. L. Pierson, B. T. McDermott, Electron. Lett. 1998, 34, 922.
- (1998) Electron. Lett. , vol.34 , pp. 922
- Sullivan, G.J.¹ Higgins, J.A.² Chen, M.Y.³ Yang, J.W.⁴ Chen, Q.⁵ Pierson, R.L.⁶ McDermott, B.T.⁷

10
- 0032046248
- N. X. Nguyen, C. Nguyen, D. E. Grider, Electron. Lett. 1998, 34, 811.
- (1998) Electron. Lett. , vol.34 , pp. 811
- Nguyen, N.X.¹ Nguyen, C.² Grider, D.E.³

11
- 0032025089
- H. Kawai, M. Hara, F. Nakamura, S. Imanaga, Electron. Lett. 1998, 34, 592.
- (1998) Electron. Lett. , vol.34 , pp. 592
- Kawai, H.¹ Hara, M.² Nakamura, F.³ Imanaga, S.⁴

12
- 0032023712
- R. Gaska, A. Osinsky, J. W. Yang, M. S. Shur, IEEE Electron Device Lett. 1998, 19, 89.
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 89
- Gaska, R.¹ Osinsky, A.² Yang, J.W.³ Shur, M.S.⁴

13
- 0342515561
- Monterey, CA, February
- K. Chu, L. F. Eastman, I. Smart, J. R. Shealy, presented at WOCSEM-MAD, Monterey, CA, February 1998.
- (1998) WOCSEM-MAD
- Chu, K.¹ Eastman, L.F.² Smart, I.³ Shealy, J.R.⁴

14
- 0032484855
- C. Nguyen, N. X. Nguyen, M. Le, D. E. Grider, Electron. Lett. 1998, 34, 309.
- (1998) Electron. Lett. , vol.34 , pp. 309
- Nguyen, C.¹ Nguyen, N.X.² Le, M.³ Grider, D.E.⁴

15
- 0032001933
- A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, I. Adesida, IEEE Electron Device Lett. 1998, 19, 54.
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 54
- Ping, A.T.¹ Chen, Q.² Yang, J.W.³ Asif Khan, M.⁴ Adesida, I.⁵

16
- 0031999751
- Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, R. J. Jenkins, L. T. Kehias, S. P. DenBaars, U. K. Mishra, IEEE Electron Device Lett. 1998, 19, 50.
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 50
- Wu, Y.-F.¹ Keller, B.P.² Fini, P.³ Keller, S.⁴ Jenkins, R.J.⁵ Kehias, L.T.⁶ DenBaars, S.P.⁷ Mishra, U.K.⁸

17
- 0032002237
- Q. Chen, J. W. Yang, R. Gaska, M. Asif Khan, M. S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgins, A. T. Ping, I. Adesida, IEEE Electron Device Lett. 1998, 19, 44.
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 44
- Chen, Q.¹ Yang, J.W.² Gaska, R.³ Asif Khan, M.⁴ Shur, M.S.⁵ Sullivan, G.J.⁶ Sailor, A.L.⁷ Higgins, J.A.⁸ Ping, A.T.⁹ Adesida, I.¹⁰

18
- 0031258039
- R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. A. Khan, M. S. Shur, IEEE Electron Device Lett. 1997. 18, 492.
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 492
- Gaska, R.¹ Chen, Q.² Yang, J.³ Osinsky, A.⁴ Khan, M.A.⁵ Shur, M.S.⁶

19
- 0031223714
- Y.-F. Wu, B. P. Keller, P. Fini, J. Pusl, M. Le, N. X. Nguyen, D. Widman, S. Keller, S. P. DenBaars, U. K. Mishra, Electron. Lett. 1997, 33, 1742.
- (1997) Electron. Lett. , vol.33 , pp. 1742
- Wu, Y.-F.¹ Keller, B.P.² Fini, P.³ Pusl, J.⁴ Le, M.⁵ Nguyen, N.X.⁶ Widman, D.⁷ Keller, S.⁸ DenBaars, S.P.⁹ Mishra, U.K.¹⁰

20
- 0031237591
- Y.-F. Wu, B. P. Keller, S. Keller, N. X. Nguyen, M. Le, C. Nguyen, T. J. Jenkins, L. T. Kehias, S. P. DenBaars, U. K. Mishra, IEEE Electron Device Lett. 1997, 18, 438.
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 438
- Wu, Y.-F.¹ Keller, B.P.² Keller, S.³ Nguyen, N.X.⁴ Le, M.⁵ Nguyen, C.⁶ Jenkins, T.J.⁷ Kehias, L.T.⁸ DenBaars, S.P.⁹ Mishra, U.K.¹⁰

21
- 0342576097
- article 17
- L. Eastman, K. Chu, W. Schaff, M. Murphy, N. G. Weimann, T. Eustis, MRS Internet J. Nitride Semicond. Res. 1997, 2, article 17.
- (1997) MRS Internet J. Nitride Semicond. Res. , vol.2
- Eastman, L.¹ Chu, K.² Schaff, W.³ Murphy, M.⁴ Weimann, N.G.⁵ Eustis, T.⁶

22
- 0031193105
- Q. Chen, J. W. Yang, M. A. Khan, A. T. Ping. I. Adesida, Electron. Lett. 1997, 33, 1413.
- (1997) Electron. Lett. , vol.33 , pp. 1413
- Chen, Q.¹ Yang, J.W.² Khan, M.A.³ Ping, A.T.⁴ Adesida, I.⁵

23
- 0031551186
- R. Gaska, Q. Chen, J. Yang, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, Electron. Lett. 1997, 33, 1255.
- (1997) Electron. Lett. , vol.33 , pp. 1255
- Gaska, R.¹ Chen, Q.² Yang, J.³ Asif Khan, M.⁴ Shur, M.S.⁵ Ping, A.⁶ Adesida, I.⁷

24
- 0031168498
- O. Aktas, Z. F. Fan, A. Botchkarev, S. N. Mohammad, M. Roth, T. Jenkins. L. Kehias, H. Morkoc, IEEE Electron Device Lett. 1997, 18, 293.
- (1997) IeEE Electron Device Lett. , vol.18 , pp. 293
- Aktas, O.¹ Fan, Z.F.² Botchkarev, A.³ Mohammad, S.N.⁴ Roth, M.⁵ Jenkins, T.⁶ Kehias, L.⁷ Morkoc, H.⁸

25
- 0031554334
- A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida, Electron. Lett. 1997, 33, 1081.
- (1997) Electron. Lett. , vol.33 , pp. 1081
- Ping, A.T.¹ Asif Khan, M.² Chen, Q.³ Yang, J.W.⁴ Adesida, I.⁵

26
- 0031168043
- Y.-F. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh, D. Kapolnek, S. P. DenBaars, U. K. Mishra, IEEE Electron Device Lett. 1997, 18, 290.
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 290
- Wu, Y.-F.¹ Keller, S.² Kozodoy, P.³ Keller, B.P.⁴ Parikh, P.⁵ Kapolnek, D.⁶ Denbaars, S.P.⁷ Mishra, U.K.⁸

27
- 0031554334
- A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida, Electron. Lett. 1997, 33, 1081.
- (1997) Electron. Lett. , vol.33 , pp. 1081
- Ping, A.T.¹ Asif Khan, M.² Chen, Q.³ Yang, J.W.⁴ Adesida, I.⁵

28
- 0031116883
- Z. Fan, C. Lu, A. E. Botchkarev, H. Tang, A. Salvador, O. Aktas, W. Kim, H. Morkoc, Electron. Lett. 1997, 33, 814.
- (1997) Electron. Lett. , vol.33 , pp. 814
- Fan, Z.¹ Lu, C.² Botchkarev, A.E.³ Tang, H.⁴ Salvador, A.⁵ Aktas, O.⁶ Kim, W.⁷ Morkoc, H.⁸

29
- 0031125937
- J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. Asif Khan, Q. Chen, J. W. Yang, M. S. Shur, IEEE Electron Device Lett. 1997, 18, 141.
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 141
- Burm, J.¹ Chu, K.² Schaff, W.J.³ Eastman, L.F.⁴ Asif Khan, M.⁵ Chen, Q.⁶ Yang, J.W.⁷ Shur, M.S.⁸

30
- 0031102123
- Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, L. F. Eastman, Electron. Lett. 1997, 33, 637.
- (1997) Electron. Lett. , vol.33 , pp. 637
- Chen, Q.¹ Gaska, R.² Asif Khan, M.³ Shur, M.S.⁴ Ping, A.⁵ Adesida, I.⁶ Burm, J.⁷ Schaff, W.J.⁸ Eastman, L.F.⁹

31
- 0031078426
- N. X. Nguyen, B. P. Keller, S. Keller, Y.-F. Wu, M. Le, C. Nguyen, S. P. DenBaars, U. K. Mishra, D. Grider, Electron. Lett. 1997, 33. 334.
- (1997) Electron. Lett. , vol.33 , pp. 334
- Nguyen, N.X.¹ Keller, B.P.² Keller, S.³ Wu, Y.-F.⁴ Le, M.⁵ Nguyen, C.⁶ DenBaars, S.P.⁷ Mishra, U.K.⁸ Grider, D.⁹

32
- 3242764889
- O. Aktas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev, H. Morkoc, Appl. Phys. Lett. 1996, 69, 3872.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3872
- Aktas, O.¹ Fan, Z.F.² Mohammad, S.N.³ Botchkarev, A.E.⁴ Morkoc, H.⁵

33
- 0030399547
- M. Asif Khan, W. Che, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, L. F. Eastman, IEEE Electron Device Lett. 1996, 17, 584.
- (1996) IEEE Electron Device Lett. , vol.17 , pp. 584
- Asif Khan, M.¹ Che, W.² Shur, M.S.³ Dermott, B.T.⁴ Higgins, J.A.⁵ Burm, J.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸

34
- 0030241696
- Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, S. P. DenBaars, U. K. Mishra, IEEE Electron Device Lett. 1996, 17, 455.
- (1996) IEEE Electron Device Lett. , vol.17 , pp. 455
- Wu, Y.-F.¹ Keller, B.P.² Keller, S.³ Kapolnek, D.⁴ DenBaars, S.P.⁵ Mishra, U.K.⁶

35
- 0030565356
- S. N. Mohammad, Z.-F. Fan, A. Salvador, O. Aktas, A. E. Botcharev, W. Kim, H. Morkoc, Appl. Phys. Lett. 1996, 69, 1420.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1420
- Mohammad, S.N.¹ Fan, Z.-F.² Salvador, A.³ Aktas, O.⁴ Botcharev, A.E.⁵ Kim, W.⁶ Morkoc, H.⁷

36
- 0001561898
- Y. F. Wu, B. P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. DenBaars, U. K. Mishra, Appl. Phys. Lett. 1996, 69, 1438.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1438
- Wu, Y.F.¹ Keller, B.P.² Keller, S.³ Kapolnek, D.⁴ Kozodoy, P.⁵ DenBaars, S.P.⁶ Mishra, U.K.⁷

37
- 0030565356
- S. N. Mohammad, Z.-F. Fan, A. Salvador, O. Aktas, A. E. Botcharev, W. Kim, H. Morkoc, Appl. Phys. Leet. 1996, 69, 1420.
- (1996) Appl. Phys. Leet. , vol.69 , pp. 1420
- Mohammad, S.N.¹ Fan, Z.-F.² Salvador, A.³ Aktas, O.⁴ Botcharev, A.E.⁵ Kim, W.⁶ Morkoc, H.⁷

38
- 0001033893
- Z. Fan, S. N. Mohammad, O. Aktas, A. E. Botcharev, A. Salvador, H. Morkoc, Appl. Phys. Lett. 1996, 69, 1229.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1229
- Fan, Z.¹ Mohammad, S.N.² Aktas, O.³ Botcharev, A.E.⁴ Salvador, A.⁵ Morkoc, H.⁶

39
- 0030084279
- M. A. Khan, Q. Chen, M. S. Shur, B. T. McDermott, J. A. Higgins, J. Burm, W. Schaff, L. F. Eastman, Electron. Lett. 1996, 32, 357.
- (1996) Electron. Lett. , vol.32 , pp. 357
- Khan, M.A.¹ Chen, Q.² Shur, M.S.³ McDermott, B.T.⁴ Higgins, J.A.⁵ Burm, J.⁶ Schaff, W.⁷ Eastman, L.F.⁸

40
- 0001750129
- J. Burm, W. J. Schaff, L. F. Eastman, H. Amano, I. Akasaki, Appl. Phys. Lett. 1996, 68, 2849.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2849
- Burm, J.¹ Schaff, W.J.² Eastman, L.F.³ Amano, H.⁴ Akasaki, I.⁵

41
- 0030084279
- M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, L. F. Eastman, Electron. Lett. 1996, 32, 357.
- (1996) Electron. Lett. , vol.32 , pp. 357
- Khan, M.A.¹ Chen, Q.² Shur, M.S.³ Dermott, B.T.⁴ Higgins, J.A.⁵ Burm, J.⁶ Schaff, W.⁷ Eastman, L.F.⁸

42
- 21544459054
- M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, M. Blasingame, M. S. Shur, H. Park, Appl. Phys. Lett. 1996, 68, 514.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 514
- Asif Khan, M.¹ Chen, Q.² Sun, C.J.³ Yang, J.W.⁴ Blasingame, M.⁵ Shur, M.S.⁶ Park, H.⁷

43
- 0029634689
- A. Ozgur, W. Kini, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, H. Morkoc, Electron. Lett. 1995, 31, 1389.
- (1995) Electron. Lett. , vol.31 , pp. 1389
- Ozgur, A.¹ Kini, W.² Fan, Z.³ Botchkarev, A.⁴ Salvador, A.⁵ Mohammad, S.N.⁶ Sverdlov, B.⁷ Morkoc, H.⁸

44
- 36449006910
- M. Asif Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burm, W. Schaff, Appl. Phys. Lett. 1995, 66, 1083.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1083
- Asif Khan, M.¹ Shur, M.S.² Kuznia, J.N.³ Chen, Q.⁴ Burm, J.⁵ Schaff, W.⁶

45
- 0041388596
- M. Asif Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, M. S. Shur, Appl. Phys. Lett. 1994, 65, 1121.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1121
- Asif Khan, M.¹ Kuznia, J.N.² Olson, D.T.³ Schaff, W.J.⁴ Burm, J.W.⁵ Shur, M.S.⁶

46
- 0842277372
- M. A. Khan, A. R. Bhattarai, J. N. Kuznia, D. T. Olsen, Appl. Phys. Lett. 1993, 63, 1214.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1214
- Khan, M.A.¹ Bhattarai, A.R.² Kuznia, J.N.³ Olsen, D.T.⁴

47
- 0343445987
- B. E. Foutz, http://iiiv.tn.cornell.edu/www/foutz/ganhfet.html.
- Foutz, B.E.¹

48
- 0033316906
- H. Morkoc, R. Cingolani, B. Gil, Solid-State Electron. 1999, 43, 1909.
- (1999) Solid-State Electron , vol.43 , pp. 1909
- Morkoc, H.¹ Cingolani, R.² Gil, B.³

49
- 0005985130
- S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren, J. Appl. Phys. 1999, 86, 1.
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

50
- 0032288163
- E. R. Brown, Solid-State Electron. 1998, 42, 2119.
- (1998) Solid-State Electron. , vol.42 , pp. 2119
- Brown, E.R.¹

51
- 0002662910
- H. Leier, A. Vescan, A. Kietrich, A. Wieszt, H. Tobler. J. M. Van Hove, P. P. Chow, A. M. Wowchak, Proc. Electrochem. Soc. 1999, 99-4, 161.
- (1999) Proc. Electrochem. Soc. , vol.99 , Issue.4 , pp. 161
- Leier, H.¹ Vescan, A.² Kietrich, A.³ Wieszt, A.⁴ Tobler, H.⁵ Van Hove, J.M.⁶ Chow, P.P.⁷ Wowchak, A.M.⁸

52
- 0343010307
- S. C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, J. Appl. Phys. 2000, 87, 402.
- (2000) J. Appl. Phys. , vol.87 , pp. 402
- Jain, S.C.¹ Willander, M.² Narayan, J.³ Van Overstraeten, R.⁴

53
- 0000889210
- R. D. Underwood, P. Kozodoy, S. Keller, S. P. DenBaars, U. K. Mishra, Appl. Phys. Lett. 1998, 73, 405.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 405
- Underwood, R.D.¹ Kozodoy, P.² Keller, S.³ DenBaars, S.P.⁴ Mishra, U.K.⁵

54
- 0642275027
- F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B 1997, 56, 10024.
- (1997) Phys. Rev. B , vol.56 , pp. 10024
- Bernardini, F.¹ Fiorentini, V.² Vanderbilt, D.³

55
- 0031551223
- P. M. Asheck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. M. Van Hove, J. M. Redwing, Electron. Lett. 1997, 33, 1230.
- (1997) Electron. Lett. , vol.33 , pp. 1230
- Asheck, P.M.¹ Yu, E.T.² Lau, S.S.³ Sullivan, G.J.⁴ Van Hove, J.M.⁵ Redwing, J.M.⁶

56
- 0004167140
- Springer Berlin
- H. Morkoc, Nitride Semiconductors and Devices, Springer. Berlin 1999.
- (1999) Nitride Semiconductors and Devices
- Morkoc, H.¹

57
- 0033879748
- G. Dang, A. P. Zhang, F. Ren, X. A. Cao, S. J. Pearton, H. Cho, J. Han, J.-I. Chyi, C.-M. Lee, C.-C. Chuo, S. N. G. Chu, R. G. Wilson, IEEE Trans. Electron Devices 2000, 47, 692.
- (2000) IEEE Trans. Electron Devices , vol.47 , pp. 692
- Dang, G.¹ Zhang, A.P.² Ren, F.³ Cao, X.A.⁴ Pearton, S.J.⁵ Cho, H.⁶ Han, J.⁷ Chyi, J.-I.⁸ Lee, C.-M.⁹ Chuo, C.-C.¹⁰ Chu, S.N.G.¹¹ Wilson, R.G.¹²

58
- 0343010305
- W11.67
- A. P. Zhang, G. T. Dang, X. A. Cao, H. Cho, F. Ren, J. Han, J.-I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, S. N. G. Chu, R. G. Wilson, S. J. Pearton, WRS Internet J. Nitride Semicond. Res. 2000, 551, W11.67.
- (2000) WRS Internet J. Nitride Semicond. Res. , vol.551
- Zhang, A.P.¹ Dang, G.T.² Cao, X.A.³ Cho, H.⁴ Ren, F.⁵ Han, J.⁶ Chyi, J.-I.⁷ Lee, C.M.⁸ Nee, T.E.⁹ Chuo, C.C.¹⁰ Chi, G.C.¹¹ Chu, S.N.G.¹² Wilson, R.G.¹³ Pearton, S.J.¹⁴

59
- 0001518843
- A. P. Zhang, G. Dang, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, X. A. Cao, S. J. Pearton, Appl. Phys. Lett. 2000, 76, 1767.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1767
- Zhang, A.P.¹ Dang, G.² Ren, F.³ Han, J.⁴ Polyakov, A.Y.⁵ Smirnov, N.B.⁶ Govorkov, A.V.⁷ Redwing, J.M.⁸ Cao, X.A.⁹ Pearton, S.J.¹⁰

60
- 0001518844
- A. P. Zhang, G. Dang, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, H. Cho, S. J. Pearton, Appl. Phys. Lett. 2000, 76, 3816.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3816
- Zhang, A.P.¹ Dang, G.² Ren, F.³ Han, J.⁴ Polyakov, A.Y.⁵ Smirnov, N.B.⁶ Govorkov, A.V.⁷ Redwing, J.M.⁸ Cho, H.⁹ Pearton, S.J.¹⁰

61
- 0033321111
- V. Khemkar, R. Patel, T. P. Chow, R. J. Gutman, Solid-State Electron. 1999, 43, 1945.
- (1999) Solid-State Electron , vol.43 , pp. 1945
- Khemkar, V.¹ Patel, R.² Chow, T.P.³ Gutman, R.J.⁴

62
- 0343881851
- private communication
- R. Singh, private communication.
- Singh, R.¹

63
- 0004286686
- Wiley, New York
- B. J. Baliga, Modern Power Devices, Wiley, New York 1994.
- (1994) Modern Power Devices
- Baliga, B.J.¹

64
- 0343010303
- unpublished results
- C. R. Abernathy, F. Ren, S. J. Pearton, M. Hong, M. Marcus, unpublished results.
- Abernathy, C.R.¹ Ren, F.² Pearton, S.J.³ Hong, M.⁴ Marcus, M.⁵

65
- 0031369603
- F. Ren, C. R. Abernathy, J. D. MacKenzie, B. P. Gila, S. J. Pearton, M. Hong, M. Marcus, M. J. Schurmann, A. G. Baca, R. J. Shul, Mater. Res. Soc. Symp. Proc 1997, 483, 443.
- (1997) Mater. Res. Soc. Symp. Proc , vol.483 , pp. 443
- Ren, F.¹ Abernathy, C.R.² MacKenzie, J.D.³ Gila, B.P.⁴ Pearton, S.J.⁵ Hong, M.⁶ Marcus, M.⁷ Schurmann, M.J.⁸ Baca, A.G.⁹ Shul, R.J.¹⁰

66
- 0032025089
- H. Kawai, M. Hara, F. Nakamura, S. Imanaga, Electron. Lett. 1998, 34, 592.
- (1998) Electron. Lett. , vol.34 , pp. 592
- Kawai, H.¹ Hara, M.² Nakamura, F.³ Imanaga, S.⁴

67
- 0000266350
- H. C. Casey. Jr., G. G. Fountain, R. G. Alley, B. P. Keller, S. P. DenBaars, Appl. Phys. Lett. 1996, 68, 1850.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1850
- Casey H.C., Jr.¹ Fountain, G.G.² Alley, R.G.³ Keller, B.P.⁴ DenBaars, S.P.⁵

68
- 21944449679
- S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno, Appl. Phys. Lett. 1998, 73, 809.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 809
- Arulkumaran, S.¹ Egawa, T.² Ishikawa, H.³ Jimbo, T.⁴ Umeno, M.⁵

69
- 0001038013
- Compound semiconductor power transistors II and state-of-the-art program on compound semiconductors XXXII
- Eds: R. F. Kopf, A. G. Baca, S. N. G. Chu, Electrochemical Society, Pennington, NJ
- M. Hong, H. M. Ng, J. Kwo, A. R. Kortan, J. N. Baillargeon, S. N. G. Chu, J. P. Mannaerts, A. Y. Cho. F. Ren, C. R. Abernathy, S. J. Pearton, J. I. Chyi, "Compound Semiconductor Power Transistors II and State-of-the-Art Program on Compound Semiconductors XXXII", Electrochem. Soc. Proc. Vol. 1 (Eds: R. F. Kopf, A. G. Baca, S. N. G. Chu), Electrochemical Society, Pennington, NJ 2000, p. 103.
- (2000) Electrochem. Soc. Proc. , vol.1 , pp. 103
- Hong, M.¹ Ng, H.M.² Kwo, J.³ Kortan, A.R.⁴ Baillargeon, J.N.⁵ Chu, S.N.G.⁶ Mannaerts, J.P.⁷ Cho, A.Y.⁸ Ren, F.⁹ Abernathy, C.R.¹⁰ Pearton, S.J.¹¹ Chyi, J.I.¹²

70
- 0034141006
- M. A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska, M. S. Shur, IEEE Electron Device Lett. 2000, 21, 63.
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 63
- Khan, M.A.¹ Hu, X.² Sumin, G.³ Lunev, A.⁴ Yang, J.⁵ Gaska, R.⁶ Shur, M.S.⁷

71
- 0342576088
- Boulder, CO, July
- T. Hashizume, R. Nakasaki, H. Hasegawa, presented, at Electronic Materials Conference, Boulder, CO, July 1999.
- (1999) Electronic Materials Conference
- Hashizume, T.¹ Nakasaki, R.² Hasegawa, H.³

72
- 0343881848
- R. Themen, G. Lucovsky, R. F. Davis, Phys. Status Solidi A 1999, 176, 196.
- (1999) Phys. Status Solidi A , vol.176 , pp. 196
- Themen, R.¹ Lucovsky, G.² Davis, R.F.³

73
- 0032576518
- F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, M. J. Schurmann, A. Baca, S. J. Pearton, C. R. Abernathy, Appl. Phys. Lett. 1998, 73, 3893.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3893
- Ren, F.¹ Hong, M.² Chu, S.N.G.³ Marcus, M.A.⁴ Schurmann, M.J.⁵ Baca, A.⁶ Pearton, S.J.⁷ Abernathy, C.R.⁸

74
- 0032295452
- F. Ren, C. R. Abernathy, J. D. MacKenzie, B. P. Gila, S. J. Pearton, M. Hong, M. A. Marcus, M. J. Schurman, A. G. Baca, R. J. Shul, Solid-State Electron. 1998, 42, 2177.
- (1998) Solid-State Electron , vol.42 , pp. 2177
- Ren, F.¹ Abernathy, C.R.² MacKenzie, J.D.³ Gila, B.P.⁴ Pearton, S.J.⁵ Hong, M.⁶ Marcus, M.A.⁷ Schurman, M.J.⁸ Baca, A.G.⁹ Shul, R.J.¹⁰

75
- 0034350479
- M. Hong, K. A. Anselm, J. P. Mannaerts, J. Kwo, A. Y. Cho, A. R. Kortan, C. M. Lee, J. I. Chyi, T. S. Lay, J. Vac. Sci. Technol. B 2000, 18, 1453.
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1453
- Hong, M.¹ Anselm, K.A.² Mannaerts, J.P.³ Kwo, J.⁴ Cho, A.Y.⁵ Kortan, A.R.⁶ Lee, C.M.⁷ Chyi, J.I.⁸ Lay, T.S.⁹

76
- 0034350479
- M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, A. Y. Cho, A. R. Kortan, C. M. Lee, J. I. Chyi, T. S. Lay, J. Vac. Sci. Technol. B 2000, 18, 1453.
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1453
- Hong, M.¹ Passlack, M.² Mannaerts, J.P.³ Kwo, J.⁴ Cho, A.Y.⁵ Kortan, A.R.⁶ Lee, C.M.⁷ Chyi, J.I.⁸ Lay, T.S.⁹

77
- 0031075990
- M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, IEEE Trans. Electron Devices 1997, 44, 214.
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 214
- Passlack, M.¹ Hong, M.² Mannaerts, J.P.³ Kwo, J.⁴ Opila, R.L.⁵ Chu, S.N.G.⁶ Moriya, N.⁷ Ren, F.⁸

78
- 0030386788
- F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, A. Y. Cho, Tech. Dig. - Int. Electron Devices Meet. 1996, 943 and also Solid-State Electron. 1997, 41, 1751.
- (1996) Tech. Dig. - Int. Electron Devices Meet. , pp. 943
- Ren, F.¹ Hong, M.² Hobson, W.S.³ Kuo, J.M.⁴ Lothian, J.R.⁵ Mannaerts, J.P.⁶ Kwo, J.⁷ Chen, Y.K.⁸ Cho, A.Y.⁹

79
- 0031268958
- F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, A. Y. Cho, Tech. Dig. - Int. Electron Devices Meet. 1996, 943 and also Solid-State Electron. 1997, 41, 1751.
- (1997) Solid-State Electron. , vol.41 , pp. 1751

80
- 0003612993
- Beijing, Oct. 21-23, IEEE Catalog Number 98 EX105 (Eds: M. Zhang, K. N. Tu), IEEE, Piscataway, NJ
- M. Hong, in ICSICT'98, 5th Int. Conf. on Solid-State and Integrated-Circuit Technology, Beijing, Oct. 21-23, IEEE Catalog Number 98 EX105 (Eds: M. Zhang, K. N. Tu), IEEE, Piscataway, NJ 1998, p. 685.
- (1998) ICSICT'98, 5th Int. Conf. on Solid-State and Integrated-Circuit Technology , pp. 685
- Hong, M.¹

81
- 0032615339
- J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, A. M. Sergent, R. L. Masaitis, Appl. Phys. Lett. 1999, 75, 1116.
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1116
- Kwo, J.¹ Murphy, D.W.² Hong, M.³ Opila, R.L.⁴ Mannaerts, J.P.⁵ Sergent, A.M.⁶ Masaitis, R.L.⁷

82
- 0001473830
- C. Monier, S. J. Pearton, P. C. Chang, A. G. Baca, F. Ren, Appl. Phys. Lett. 2000, 70, 3115.
- (2000) Appl. Phys. Lett. , vol.70 , pp. 3115
- Monier, C.¹ Pearton, S.J.² Chang, P.C.³ Baca, A.G.⁴ Ren, F.⁵

83
- 0032672027
- L. S. McCarthy, P. Kozodoy, M. J. Rodwell, S. P. DenBaars, U. K. Mishra, IEEE Electron Device Lett. 1999, 20, 277.
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 277
- McCarthy, L.S.¹ Kozodoy, P.² Rodwell, M.J.³ DenBaars, S.P.⁴ Mishra, U.K.⁵

84
- 4043059231
- F. Ren, C. R. Abernathy, J. Van Hove, P. Chow, J. J. Klaassen, R. F. Kopf, H. Cho, J. LaRoche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S. J. Pearton, MRS Internet J. Nitride Semicond. Res. 1998, 3, 41.
- (1998) MRS Internet J. Nitride Semicond. Res. , vol.3 , pp. 41
- Ren, F.¹ Abernathy, C.R.² Van Hove, J.³ Chow, P.⁴ Klaassen, J.J.⁵ Kopf, R.F.⁶ Cho, H.⁷ LaRoche, J.⁸ Wilson, R.G.⁹ Han, J.¹⁰ Shul, R.J.¹¹ Baca, A.G.¹² Pearton, S.J.¹³

85
- 0032614607
- J. Han, A. G. Baca, R. J. Shul, F. Ren, A. P. Zhang, S. M. Donovan, X. A. Cao, C. R. Abernathy, S. J. Pearton, R. G. Wilson, Appl. Phys. Lett. 1999. 74, 2702.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2702
- Han, J.¹ Baca, A.G.² Shul, R.J.³ Ren, F.⁴ Zhang, A.P.⁵ Donovan, S.M.⁶ Cao, X.A.⁷ Abernathy, C.R.⁸ Pearton, S.J.⁹ Wilson, R.G.¹⁰

86
- 0034158771
- X. Cao, G. Dang, A. P. Zhang, F. Ren, J. M. Van Hove, C. J. Polley, P. P. Chow, D. J. King, C. R. Abernathy, S. J. Pearton, Electrochem, Solid-State Lett. 2000, 3, 144.
- (2000) Electrochem, Solid-State Lett. , vol.3 , pp. 144
- Cao, X.¹ Dang, G.² Zhang, A.P.³ Ren, F.⁴ Van Hove, J.M.⁵ Polley, C.J.⁶ Chow, P.P.⁷ King, D.J.⁸ Abernathy, C.R.⁹ Pearton, S.J.¹⁰

87
- 0347616375
- A. P. Zhang, G. T. Dang, F. Ren, J. Han, R. J. Shul, A. G. Baca, H. Cho, C. Monier, X. Cao, C. R. Abernathy, S. J. Pearton, Appl. Phys. Lett. 2090, 76, 2943.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2943
- Zhang, A.P.¹ Dang, G.T.² Ren, F.³ Han, J.⁴ Shul, R.J.⁵ Baca, A.G.⁶ Cho, H.⁷ Monier, C.⁸ Cao, X.⁹ Abernathy, C.R.¹⁰ Pearton, S.J.¹¹

88
- 0343881840
- B. S. Shelton, J. Huang, D. Lambert, T. Zhu, M. Wong, C. J. Eiting, H. Kwon, M. Feng, R. D. Dupuis, Electron. Lett. 2000, 36, 35.
- (2000) Electron. Lett. , vol.36 , pp. 35
- Shelton, B.S.¹ Huang, J.² Lambert, D.³ Zhu, T.⁴ Wong, M.⁵ Eiting, C.J.⁶ Kwon, H.⁷ Feng, M.⁸ Dupuis, R.D.⁹

89
- 18244419619
- F. Ren, H. Han, J. M. Van Hove, P. P. Chow, J. LaRoche, R. F. Kopf, R. G. Wilson, A. G. Baca, R. J. Shul, C. R. Abernathy, S. J. Pearton, Solid-State Electron. 2000, 44, 239.
- (2000) Solid-State Electron. , vol.44 , pp. 239
- Ren, F.¹ Han, H.² Van Hove, J.M.³ Chow, P.P.⁴ LaRoche, J.⁵ Kopf, R.F.⁶ Wilson, R.G.⁷ Baca, A.G.⁸ Shul, R.J.⁹ Abernathy, C.R.¹⁰ Pearton, S.J.¹¹

90
- 0034140885
- M. S. Shur, A. D. Bylchovski, R. Gaska, Solid-State Electron. 2000, 44, 205.
- (2000) Solid-State Electron. , vol.44 , pp. 205
- Shur, M.S.¹ Bylchovski, A.D.² Gaska, R.³

91
- 0034140275
- P. M. Asbeck, E. T. Yu, S. S. Lau, W. Sun, X. Dang, C. Shi, Solid-State Electron. 2000, 44, 211.
- (2000) Solid-State Electron , vol.44 , pp. 211
- Asbeck, P.M.¹ Yu, E.T.² Lau, S.S.³ Sun, W.⁴ Dang, X.⁵ Shi, C.⁶

92
- 0032620512
- S. Yoshida, H. Suzuki, J. Appl. Phys. 1999, 85, 7931.
- (1999) J. Appl. Phys. , vol.85 , pp. 7931
- Yoshida, S.¹ Suzuki, H.²

93
- 0033171966
- S. Yoshida, J. Suzuki, J. Appl. Phys. 1999, 38, L851.
- (1999) J. Appl. Phys. , vol.38
- Yoshida, S.¹ Suzuki, J.²

94
- 12944270576
- X. A. Cao, G. Dang, A. P. Zhang, F. Ren, C. R. Abernathy, S. J. Pearton, J. M. Van Hove, C. J. Polley, A. M. Wowchack, P. P. Chow, D. J. King, S. N. G. Chu, Electrochem. Solid-State Lett. 2000, 3, 333.
- (2000) Electrochem. Solid-State Lett. , vol.3 , pp. 333
- Cao, X.A.¹ Dang, G.² Zhang, A.P.³ Ren, F.⁴ Abernathy, C.R.⁵ Pearton, S.J.⁶ Van Hove, J.M.⁷ Polley, C.J.⁸ Wowchack, A.M.⁹ Chow, P.P.¹⁰ King, D.J.¹¹ Chu, S.N.G.¹²

95
- 0001462658
- J. B. Limb, H. Zing, B. Moran, L. McCarthy, S. P. DenBaars, U. K. Mishra, Appl. Phys. Lett. 2000, 76, 2457.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2457
- Limb, J.B.¹ Zing, H.² Moran, B.³ McCarthy, L.⁴ DenBaars, S.P.⁵ Mishra, U.K.⁶

96
- 0001873238
- J. B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson. Y. Smorch-Kova, S. P. DenBaars, U. K. Mishra, Electron. Lett. 1999, 35, 19.
- (1999) Electron. Lett. , vol.35 , pp. 19
- Limb, J.B.¹ McCarthy, L.² Kozodoy, P.³ Xing, H.⁴ Ibbetson, J.⁵ Smorch-Kova, Y.⁶ DenBaars, S.P.⁷ Mishra, U.K.⁸

97
- 0033882740
- X. A. Cao, J. M. Van Hove, J. Klaassen, P. P. Chow, D. J. King, F. Ren, G. Dang, A. P. Zhang, C. R. Abernathy, S. J. Pearton, Solid-State Electron. 2000. 44, 649.
- (2000) Solid-State Electron. , vol.44 , pp. 649
- Cao, X.A.¹ Van Hove, J.M.² Klaassen, J.³ Chow, P.P.⁴ King, D.J.⁵ Ren, F.⁶ Dang, G.⁷ Zhang, A.P.⁸ Abernathy, C.R.⁹ Pearton, S.J.¹⁰

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