Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001)

Applied Physics Letters

Volumn 75, Issue 7, 1999, Pages 944-946

  Thamm, A ^a   Brandt, O ^a   Takemura, Y ^a,b   Trampert, A ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001629816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124562     Document Type: Article

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