Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 501-510

  Semond, F ^a   Cordier, Y ^a   Grandjean, N ^a   Natali, F ^a   Damilano, B ^a   Vezian S ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1842686061     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<501::AID-PSSA501>3.0.CO;2-6     Document Type: Article

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