Theoretical evidence for efficient p-type doping of GaN usina beryllium

Applied Physics Letters

Volumn 70, Issue 22, 1997, Pages 2990-2992

  Bernardini, Fabio ^a   Fiorentini, Vincenzo ^a   Bosin, Andrea ^b  

^a UNIVERSITY OF CAGLIARI   (Italy)

^b Zona Industriale Est   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000596029     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118766     Document Type: Article

References (14)

1. Zn is inefficient due to its ionization energy of 0.34 eV; F. Bernardini, V. Fiorentini. and R. M. Nieminen, in The Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2881, reported an ab initio theoretical value of 0.33 eV.
2. J. Neugebauer and C. G. van de Walle. Appl. Phys. Lett. 68, 1829 (1996); Festkörperprobleme/Advances in Solid State Physics, edited by R. Helbig (Vieweg, Braunschweig, 1996), Vol. 35, p. 25.
3. J. Neugebauer and C. G. van de Walle. Appl. Phys. Lett. 68, 1829 (1996); Festkörperprobleme/Advances in Solid State Physics, edited by R. Helbig (Vieweg, Braunschweig, 1996), Vol. 35, p. 25.
4. R. Dreizler and E. Gross, Density Functional Theory (Springer, Berlin, 1990).
5. V. Fiorentini, F. Bernardini, A. Bosin, and D. Vanderbilt, in The Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2877. This paper and Ref. 1 are electronically available at the WWW site http://xxx.lanl.gov/list/mtrl-th/9610.
6. A. Bosin, V. Fiorentini, and D. Vanderbilt, in Gallium Nitride and Related Compounds, edited by R. D. Dupuis, J. A. Edmond, F. Ponce, and S. Nakamura, MRS Proceedings [MRS Proc. 395, 503 (1996)]; available at http://sparc10.unica.it/~fiore/ac.ps; F. Bernardini, A. Bosin, and V. Fiorentini (unpublished).
7. A. Bosin, V. Fiorentini, and D. Vanderbilt, in Gallium Nitride and Related Compounds, edited by R. D. Dupuis, J. A. Edmond, F. Ponce, and S. Nakamura, MRS Proceedings [MRS Proc. 395, 503 (1996)]; available at http://sparc10.unica.it/~fiore/ac.ps; F. Bernardini, A. Bosin, and V. Fiorentini (unpublished).
8. C. G. Van de Walle, D. B. Laks, G. F. Neumark, and S. T. Pantelides, Phys. Rev. B 74, 9425 (1993).
9. Observation of this effect has been reported recently. O. Brandt (private communication); H. Riechert (private communication).
10. Observation of this effect has been reported recently. O. Brandt (private communication); H. Riechert (private communication).
11. J. Neugebauer and C. G. van de Walle, Phys. Rev. Lett. 75, 4452 (1995).
12. We checked several options, based on calculations for Be-H and for isolated H in GaN (see Ref. 5), including H bound at N vacancies. See also Ref. 8.
13. Y. Zhou, R. Luchsinger, and P. Meyer, Phys. Rev. B 51, 4166 (1995).
14. O. Brandt, H. Yang, H. Kostial, and K. Ploog, Appl. Phys. Lett. 69, 2707 (1996).