Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2886-2888

  Mikroulis, S ^a   Georgakilas, A ^a   Kostopoulos, A ^a   Cimalla, V ^a   Dimakis, E ^a   Komninou, Ph ^b,c  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC PLANES; FORMATION ENERGIES; GAN FILM; GAN THIN FILMS; HIGH SUBSTRATE TEMPERATURE; IN-PLANE LATTICES; LOW TEMPERATURES; NITRIDATION TEMPERATURE; NITRIDE LAYERS; RADIO FREQUENCIES; SUBSTRATE SURFACE; SURFACE NITRIDATION;

GALLIUM NITRIDE; NITROGEN PLASMA; SUBSTRATES;

NITRIDATION;

EID: 79956009342     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1472481     Document Type: Article

References (13)

1. T. D. Moustakas, T. Lei, and R. J. Molnar, Physica B 185, 36 (1993). phbPHYBE30921-4526
2. F. Widmann, G. Feuillet, B. Daudin, and J. L. Rouviere, J. Appl. Phys. 85, 1550 (1999). japJAPIAU0021-8979
3. C. Heinlein, J. Grepstad, T. Berge, and H. Riechert, Appl. Phys. Lett. 71, 341 (1997). aplAPPLAB0003-6951
4. C. Heinlein, J. K. Grepstad, H. Riechert, and R. Averbeck, Mater. Sci. Eng., B 58, 270 (1999). msbMSBTEK0921-5107
5. S. Sonoda, S. Shimizu, Y. Suzuki, K. Balakrishnan, J. Shirakashi, and H. Okumura, Jpn. J. Appl. Phys., Part 2 39, L73 (2000). jjcJAPLD80021-4922
6. M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, J. Smart, J. R. Shealy, L. F. Eastmann, and T. J. Eustis, J. Vac. Sci. Technol. B 17, 1252 (1999). jvbJVTBD90734-211X
7. K. Amimer, A. Georgakilas, M. Androulidaki, K. Tsagaraki, M. Pavelescu, S. Mikroulis, G. Constantinidis, J. Arbiol, F. Peiro, A. Cornet, M. Calamiotou, J. Kuzmik, and V. Yu. Davydov, Mater. Sci. Eng., B 80, 304 (2001). msbMSBTEK0921-5107
8. N. Grandjean, J. Massies, and M. Leroux, Appl. Phys. Lett. 69, 2071 (1996). aplAPPLAB0003-6951
9. A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, M. Androulidaki, Ph. Komninou, Th. Kehagias, and Th. Karakostas, Phys. Status Solidi A 188, 567 (2001). psaPSSABA0031-8965
10. A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998). aplAPPLAB0003-6951
11. J. L. Weyher, S. Müller, J. Grzegory, and S. Porowski, J. Cryst. Growth 182, 17 (1997). jcrJCRGAE0022-0248
12. S. Sonoda, S. Shimizu, X.-Q. Shen, S. Hara, and H. Okumura, Jpn. J. Appl. Phys., Part 2 39, L202 (2000). jjcJAPLD80021-4922
13. R. Di Felice and J. E. Northrup, Appl. Phys. Lett. 73, 936 (1998). aplAPPLAB0003-6951