GaN-based modulation doped FETs and UV detectors

Solid-State Electronics

Volumn 46, Issue 2, 2002, Pages 157-202

  Morkoç, Hadis ^a,c   Carlo, Aldo Di ^b   Cingolani, Roberto ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c UNIVERSITY OF SALENTO   (Italy)

Author keywords

GaN; High power FETs; MODFETs; Nitride semiconductors; Solar blind detectors; UV detectors

Indexed keywords

GAIN MEASUREMENT; GALLIUM NITRIDE; MODULATION; SEMICONDUCTOR DOPING; SOLAR RADIATION; SPURIOUS SIGNAL NOISE; ULTRAVIOLET DETECTORS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); SOLAR BLIND DETECTORS;

FIELD EFFECT TRANSISTORS;

EID: 0036467047     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00271-4     Document Type: Review

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