GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 24, 1999, Pages 3616-3618

  Grandjean, N ^a   Massies, J ^a   Dalmasso, S ^a   Vennegues P ^a   Siozade, L ^b   Hirsch, L ^c  

^a CRHEA CNRS   (France)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

^c UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM INDIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0032606525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123199     Document Type: Article

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