Stability of surface reconstructions on hexagonal GaN grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 94-99

  Hacke, P ^a   Feuillet, G ^a,b   Okumura, H ^a   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b CEA GRENOBLE   (France)

Author keywords

GaN; MBE; Reconstructions; RHEED

Indexed keywords

MOLECULAR BEAM EPITAXY; NITROGEN; OPTIMIZATION; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031145681     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01174-8     Document Type: Article

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