Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 II, 2000, Pages 1915-1918

  Ramachandran, V ^a   Feenstra, R M ^a   Sarney, W L ^b   Salamanca Riba, L ^b   Greve, D W ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034230076     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582445     Document Type: Article

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