Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2284-2289

  Chen, Huajie ^a   Feenstra, R M ^a   Northrup, J E ^b   Zywietz, T ^c   Neugebauer, J ^c   Greve, D W ^d  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^d CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044524050     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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