Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 968-970

  Yodo, Tokuo ^a   Yona, Hiroaki ^a   Ando, Hironori ^a   Nosei, Daiki ^a   Harada, Yoshiyuki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BAND EDGE LUMINESCENCE; BAND-EDGE PHOTOLUMINESCENCE; CRYSTAL GRAINS; DONOR-BOUND EXCITON; ELECTRON CYCLOTRONS; INN FILMS; PL EMISSION; SI (001) SUBSTRATE; SI (1 1 1); SI SUBSTRATES; SI(0 0 1); SI(111) SUBSTRATE; THICK INN FILMS;

CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; LUMINESCENCE; MOLECULAR BEAM EPITAXY; SILICON; SUBSTRATES; ZINC SULFIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79957952165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1450255     Document Type: Article

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