Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy

Applied Physics Letters

Volumn 83, Issue 6, 2003, Pages 1136-1138

  Lu, Hai ^a   Schaff, William J ^a   Eastman, Lester F ^a   Wu, J ^b   Walukiewicz, Wladek ^b   Cimalla, Volker ^c   Ambacher, Oliver ^c  

^a Cornell University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT ABSORPTION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HETEROEPITAXIAL GROWTH;

INDIUM COMPOUNDS;

EID: 0042926669     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1599634     Document Type: Article

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