Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 471-475

  Kitamura, T ^a   Cho, S H ^a   Ishida, Y ^a   Ide, T ^a   Shen, X Q ^a   Nakanishi, H ^b   Chichibu, S ^c   Okumura, H ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

INTERFACES (MATERIALS); LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

EPILAYERS; HIGH RESOLUTION X-RAY DIFFRACTION; PLASMA MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035398123     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00745-X     Document Type: Conference Paper

References (18)