Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1566-1571

  Park, Yeonjoon ^a   Cich, Michael J ^a   Zhao, Rian ^a   Specht, Petra ^a   Weber, Eicke R ^a   Stach, Eric ^b   Nozaki, Shinji ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLAYERS; MORPHOLOGY; STACKING FAULTS; SUBSTRATES; TWINNING; X RAY CRYSTALLOGRAPHY;

WURTZITE LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034186966     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591427     Document Type: Article

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