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Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4741-4743

Small band gap bowing in In1-xGaxN alloys

(7) Wu, J a,b Walukiewicz, W b Yu, K M b Ager, J W b Haller, E E b,c Lu, Hai d Schaff, William J d

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c University of California Berkeley (United States)

d School of Operations Research and Industrial Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BOWING PARAMETERS; BROAD SPECTRAL; DIRECT BAND GAP; FUNDAMENTAL BAND GAP; GA CONTENT; HIGH QUALITY; NEAR INFRARED; SAPPHIRE SUBSTRATES;

CERIUM ALLOYS; ENERGY GAP; GALLIUM; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 79956041003 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1489481 Document Type: Article

Times cited : (632)

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