The influence of structural properties on conductivity and luminescence of MBE grown InN

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 111-118

  Specht, P ^a,b   Armitage, R ^a   Ho, J ^a,b   Gunawan, E ^b   Yang, Q ^a,b   Xu, X ^a,c   Kisielowski, C ^c   Weber, E R ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A1. Crystal structure; A1. Impurities in thin films; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Indium nitride

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ENERGY GAP; LUMINESCENCE; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ELECTRON DRIFT MOBILITY; EPILAYERS; HALL DATA; INN; PHOTOLUMINESCENCE SPECTRA;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3342941787     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.097     Document Type: Conference Paper

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