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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1487-1490

Effect of Ga-rich growth conditions on the optical properties of GaN films grown by plasma-assisted molecular beam epitaxy

(10) Sampath, A V a Garrett, G A a Collins, C J a Boyd, P a Choe, J a Newman, P G a Shen, H a Wraback, M a Molnar, R J b Caissie, J b

a U S ARMY RESEARCH LABORATORY (United States)

b MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRON GAS; FLUXES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SPUTTER DEPOSITION;

FULL WIDTH AT HALF MAXIMUM (FWHM); PHOTOGENERATION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE); VAPOR PHASE EPITAXY METHODS;

GALLIUM NITRIDE;

EID: 3242686178 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1688359 Document Type: Conference Paper

Times cited : (28)

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