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Volumn 92, Issue 1, 2002, Pages 338-345
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High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAN/GAN;
ALGAN/GAN HETEROSTRUCTURES;
DC AND RF CHARACTERISTICS;
FILLING FACTOR;
FRACTIONAL QUANTUM HALL EFFECTS;
GAN TEMPLATE;
HETEROSTRUCTURE DESIGNS;
HIGH MOBILITY;
HYDRIDE VAPOR PHASE EPITAXY;
LOW TEMPERATURES;
LOW-DISLOCATION DENSITY;
MBE GROWTH;
PARASITIC CONDUCTION;
PEAK MOBILITY;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
ROOM TEMPERATURE;
ROOM-TEMPERATURE DENSITY;
ROOM-TEMPERATURE RESISTIVITY;
SEMI-INSULATING;
SEMI-INSULATING GAN;
SHEET DENSITY;
THREADING DISLOCATION DENSITIES;
TWO-DIMENSIONAL ELECTRON GAS (2DEG);
ALUMINUM;
ELECTRON GAS;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
HIGH ELECTRON MOBILITY TRANSISTORS;
MOLECULAR BEAM EPITAXY;
QUANTUM HALL EFFECT;
SEMICONDUCTING GALLIUM COMPOUNDS;
TRANSPORT PROPERTIES;
VAPORS;
HETEROJUNCTIONS;
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EID: 0036639265
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1484227 Document Type: Article |
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Times cited : (86)
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References (15)
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