Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers

Journal of Applied Physics

Volumn 91, Issue 4, 2002, Pages 2508-2518

  Losurdo, Maria ^a   Capezzuto, Pio ^a   Bruno, Giovanni ^a   Namkoong, Gon ^b   Doolittle, W Alan ^b   Brown, April S ^b  

^a CNR   (Italy)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; GAN BUFFER; GAN EPILAYERS; GAN GROWTH; GAN ISLANDS; HEXAGONAL GAN; HIGH QUALITY; LOW QUALITIES; LOW TEMPERATURES; NITRIDATION TEMPERATURE; NITRIDED; NUCLEATION LAYERS; OPTICAL QUALITIES; OXYNITRIDES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; PLASMA NITRIDATION; RF PLASMA; SAPPHIRE NITRIDATION; SAPPHIRE SUBSTRATES; SAPPHIRE SURFACE;

EPILAYERS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); NUCLEATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

EID: 0037084016     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1435835     Document Type: Article

References (37)

1. W. Kim, M. Yeadon, A. E. Botchkarev, S. N. Mohammad, J. M. Gibson, and H. Morkoç, J. Vac. Sci. Technol. B 15, 921 (1997). jvb JVTBD9 0734-211X
2. N. Grandjean, J. Massies, and M. Leroux, Appl. Phys. Lett. 69, 2071 (1996). apl APPLAB 0003-6951
3. N. Grandjean, J. Massies, Y. Martinez, P. Vennegues, M. Leroux, and M. Laugt, J. Cryst. Growth 178, 220 (1997). jcr JCRGAE 0022-0248
4. S. Keller, B. P. Keller, Y. F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 68, 1525 (1996). apl APPLAB 0003-6951
5. K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, and S. Minagawa, J. Appl. Phys. 79, 3487 (1996). jap JAPIAU 0021-8979
6. T. D. Moustakas, R. J. Molnar, T. Lei, G. Menon, and C. R. Eddy, Mater. Res. Soc. Symp. Proc. 242, 427 (1992). mrs MRSPDH 0272-9172
7. T. D. Moustakas, T. Lei, and R. J. Molnar, Physica B 185, 36 (1993). phb PHYBE3 0921-4526
8. H. M. Ng, D. Doppalapudi, D. Korakakis, R. Singh, and T. D. Moustakas, J. Cryst. Growth 189/190, 349 (1998). jcr JCRGAE 0022-0248
9. F. Widmann, G. Feuillet, B. Daudin, and J. L. Rouviere, J. Appl. Phys. 85, 1550 (1999). jap JAPIAU 0021-8979
10. C. Heinlein, J. Grepstad, T. Berge, and H. Reichert, Appl. Phys. Lett. 71, 341 (1997). apl APPLAB 0003-6951
11. Y. Cho, Y. Kim, E. R. Weber, S. Ruvimov, and Z. Liliental-Weber, J. Appl. Phys. 85, 7909 (1999). jap JAPIAU 0021-8979
12. E. Kim, I. Berishev, A. Bensaula, S. Lee, S. S. Perry, K. Waters, and J. A. Schultz, J. Vac. Sci. Technol. B 16, 1270 (1998). jvb JVTBD9 0734-211X
13. M. Yeadon, M. T. Marshall, F. Hamdani, S. Pekin, H. Morkoç, and J. M. Gibson, J. Appl. Phys. 83, 2847 (1998). jap JAPIAU 0021-8979
14. T. H. Myers, L. S. Hirsch, L. T. Romano, and M. R. Richards-Babb, J. Vac. Sci. Technol. B 16, 2261 (1998). jvb JVTBD9 0734-211X
15. M. Losurdo, P. Capezzuto, and G. Bruno, J. Appl. Phys. 88, 2138 (2000). jap JAPIAU 0021-8979
16. G. Namkoong, W. A. Doolittle, A. S. Brown, M. Losurdo, P. Capezzuto, G. Bruno, J. Appl. Phys. 91, 2499 (2002). jap JAPIAU 0021-8979
17. X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 68, 1371 (1996). apl APPLAB 0003-6951
18. H. G. Tompkins, A User's Guide to Ellipsometry (Academic, San Diego, CA, 1993).
19. D. A. G. Bruggemann, Ann. Phys. (Leipzig) 24, 636 (1935). any ANPYA2 0003-3804
20. D. E. Aspnes, J. B. Theeten, and F. Hottier, Phys. Rev. B 20, 3292 (1979). prb PRBMDO 0163-1829
21. C. H. Yan, H. Yao, J. M. Van Hove, A. M. Wowhak, P. P. Chow, and J. M. Zavada, J. Appl. Phys. 88, 3463 (2000). jap JAPIAU 0021-8979
22. N. V. Edwards, S. D. Yoo, M. D. Bremser, M. N. Horton, N. R. Perkins, T. W. Weeks, H. Liu, R. A. Stall, T. F. Kuech, R. F. Davis, and D. E. Aspnes, Thin Solid Films 313-314, 187 (1998). tsf THSFAP 0040-6090
23. D. Brummer, J. Angerer, E. Bustarret, E. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 82, 5090 (1997). jap JAPIAU 0021-8979
24. G. E. Jellison, Thin Solid Films 313-314, 33 (1998). tsf THSFAP 0040-6090
25. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, in Handbook of X-Ray Photoelectron Spectroscopy, edited by J. Chastain (Perkin-Elmer, Eden Prairie, MN, 1992).
26. A. V. Kuznetsov, E. V. Rakova, S. S. Lee, and P. J. Chong, J. Cryst. Growth 167, 458 (1996). jcr JCRGAE 0022-0248
27. N. V. Edwards, M. D. Bremser, A. D. Batchelor, I. A. Buyanova, L. D. Madsen, S. D. Yoo, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, R. F. Davis, D. E. Aspnes, and B. Monemar, Thin Solid Films 364, 98 (2000). tsf THSFAP 0040-6090
28. D. C. Reynolds, D. C. Look, J. E. Hoelscher, R. E. Sherriff, and R. J. Molnar, J. Appl. Phys. 88, 1460 (2000). jap JAPIAU 0021-8979
29. L. Siozade, S. Colard, M. Mihailovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, and J. Massies, Phys. Status Solidi B 216, 73 (1999). psb PSSBBD 0370-1972
30. S. Sugai, K. Shimizu, H. Watanabe, H. Miki, and K. Kawasaki, Surf. Sci. 287/288, 455 (1993). sus SUSCAS 0039-6028
31. P. H. F. Reijnen, U. van Slooten, and A. W. Kleyn, J. Chem. Phys. 94, 695 (1991). jcp JCPSA6 0021-9606
32. A. D. Westwood, R. A. Youngman, M. R. McCartney, A. N. Cormack, and M. R. Notis, J. Mater. Res. 10, 1270 (1995); jmr JMREEE 0884-2914
33. 10, 1287 (1995), and references therein. jmr JMREEE 0884-2914
34. C. R. Weast, Handbook of Chemistry and Physics (CRC, Boca Raton, FL, 1976).
35. J. Bruley, A. D. Westwood, R. A. Youngman, J. C. Zhao, and M. R. Notis, Mater. Res. Soc. Symp. Proc. 357, 265 (1995). mrs MRSPDH 0272-9172
36. J. W. P. Hsu, M. J. Manfra, S. N. G. Chu, C. H. Chen, L. N. Pfeiffer, and R. J. Molnar, Appl. Phys. Lett. 78, 3980 (2001). apl APPLAB 0003-6951
37. L. T. Romano, J. E. Northrup, and M. A. O'Keefe, Appl. Phys. Lett. 69, 2394 (1996). apl APPLAB 0003-6951