The effect of V:III ratio on the growth of InN nanostructures by molecular beam epitaxy

Surface Science

Volumn 532-535, Issue , 2003, Pages 806-810

  Oliver, R A ^a   Norenberg C ^a   Martin, M G ^a   Castell, M R ^a   Allers, L ^b   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b Oxford Applied Research   (United Kingdom)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Nitrides; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Self assembly

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; ENERGY GAP; MOLECULAR BEAM EPITAXY; NITRIDES; POLYCRYSTALLINE MATERIALS; PRESSURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; THERMODYNAMICS;

ISLAND FORMATION;

NANOSTRUCTURED MATERIALS;

EID: 0037508507     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00125-0     Document Type: Conference Paper

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