Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 296-317

  Calleja, E ^a   Sanchez Garcia M A ^a   Sanchez F J ^a   Calle, F ^a   Naranjo, F B ^a   Munoz E ^a   Molina, S I ^b   Sanchez A M ^b   Pacheco, F J ^b   Garcia R ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; TENSILE STRESS; X RAY DIFFRACTION ANALYSIS;

X RAY DIFFRACTION FULL-WIDTH AT HALF-MAXIMUM;

SEMICONDUCTOR GROWTH;

EID: 0038606430     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01346-3     Document Type: Article

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