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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 5 A, 2003, Pages 2549-2559

RF-molecular beam epitaxy growth and properties of InN and related alloys

(3) Nanishi, Yasushi a Saito, Yoshiki a Yamaguchi, Tomohiro a

a RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

Band gap; Characterization; EXAFS; InGaN; InN; Optical absorption; PL; Raman scattering; RF MBE; XRD

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BAND GAP;

ENERGY GAP;

EID: 0038711780 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.2549 Document Type: Review

Times cited : (423)

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